The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) arestud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded byH. As, P, B and Al profiles were formed by multiple energy ion implantationover a con- centration range of 1 - 30 x 1019 /cm3. Anneals were performed inair over the temperature range 460-660 oC and the rate of interface motion wasmonitored us- ing time resolved reflectivity. The dopant-enhanced SPE rateswere modeled with the generalized Fermi level shifting model using degeneratesemiconductor statis- tics. The effect of band bending between the crystallineand amorphous sides of the interface is also considered.
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机译:本征和增强的固相外延(SPE)的动力学是在埋入的非晶Si(a-Si)层中进行的,其中SPE不受H的阻碍。 As,P,B和Al的轮廓是通过在1-30 x 1019 / cm3的浓度范围内进行多次能量离子注入而形成的。在空气中在460-660 oC的温度范围内进行退火,并使用时间分辨的反射率监控界面运动的速率。使用退化的半导体统计量,通过广义费米能级迁移模型对掺杂剂增强的固相萃取速率进行建模。还考虑了界面的结晶侧和非晶侧之间的带弯曲的影响。
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